• DocumentCode
    2380322
  • Title

    Epitaxial Growth of Highly Strained SiGe Layers Directly on Si(001) Substrate

  • Author

    Halpin, John ; Shah, Vishal ; Myronov, Maksym ; Leadley, David

  • Author_Institution
    Phys. Dept., Univ. of Warwick, Coventry, UK
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Highly strained epilayers of Si0.4Ge0.6 can be grown pseudomorphically on a Si (001) substrate with thicknesses up to ~25 nm. The epilayer surface morphology was analyzed by atomic force microscopy (AFM) and defects observed in the relaxed epilayers were analyzed by combination of plan view transmission electron microscopy PV-TEM and AFM.
  • Keywords
    X-ray diffraction; atomic force microscopy; chemical vapour deposition; epitaxial growth; germanium alloys; semiconductor epitaxial layers; semiconductor growth; silicon alloys; surface morphology; transmission electron microscopy; AFM; HR-XRD; PV-TEM; Si; Si(001) substrate; SiGe; XTEM analysis; atomic force microscopy; epilayer surface morphology; epitaxial growth; high resolution X-ray diffraction; highly strained layers; plan view transmission electron microscopy; Atomic force microscopy; Silicon; Silicon germanium; Strain; Substrates; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222492
  • Filename
    6222492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380322