Power HEMT CAD for wireless communications applications

Author

Albasha, Lutfi ; Snowden, Christopher M. ; Pollard, Roger D.

Author_Institution

Sch. of Electron. & Electr. Eng., Leeds Univ., UK

fYear

1997

fDate

11-13 Aug 1997

Firstpage

129

Lastpage

133

Abstract

This paper presents a model for the breakdown process in power HEMT devices used in mobile communications systems. The model is integrated into a fast quasi-two-dimensional physical simulator. The work is based on a study of the complex interactions between the different breakdown mechanisms, including avalanche, and the influence of design parameters. The model takes account of the tunnelling effects in the region of the gate metallization. A new thermal model is included which monitors the channel temperature and controls the tunnelling mechanism. The design and measurements of 38 GHz MMIC power amplifiers designed for use in a QPSK communications link are presented

Keywords

HEMT integrated circuits; circuit CAD; electric breakdown; integrated circuit metallisation; integrated circuit modelling; land mobile radio; millimetre wave power amplifiers; quadrature phase shift keying; radio equipment; semiconductor device metallisation; semiconductor device models; 38 GHz; 38 GHz MMIC power amplifiers; QPSK communications link; avalanche; breakdown process; channel temperature; design parameters; gate metallization; mobile communications; power HEMT CAD; quasi-two-dimensional physical simulator; thermal model; tunnelling effects; wireless communications applications; Avalanche breakdown; Communication system control; Electric breakdown; HEMTs; Metallization; Mobile communication; Power system modeling; Temperature control; Tunneling; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications Conference, 1997., Proceedings

Conference_Location

Boulder, CO

Print_ISBN

0-7803-4194-5

Type

conf

DOI

10.1109/WCC.1997.622263

Filename

622263