• DocumentCode
    2381605
  • Title

    Using PCM in Next-generation Embedded Space Applications

  • Author

    Ferreira, Alexandre P. ; Childers, Bruce ; Melhem, Rami ; Mosse, Daniel ; Yousif, Mazin

  • Author_Institution
    Univ. of Pittsburgh, Pittsburgh, PA, USA
  • fYear
    2010
  • fDate
    12-15 April 2010
  • Firstpage
    153
  • Lastpage
    162
  • Abstract
    Dynamic RAM (DRAM) has been the best technology for main memory for over thirty years. In embedded space applications, radiation hardened DRAM is needed because gamma rays cause transient errors; such rad-hard memories are extremely expensive and power hungry, leading to lower life (or increased battery weight) for satellite and other devices operating in space. Despite these problems, DRAM has been the technology of choice because it has better performance and it scales well. New, more energy efficient, non-volatile, scalable, radiation resistant memory technologies are now available, namely phase-change memory (PCM), making the DRAM choice much less compelling. However, current approaches require changes to PCM device internal circuitry, the operating system and/or the CPU cache-memory organization/interface. This paper presents a new, practical, detailed architecture, called PMMA, to effectively use PCM for main memory in next-generation embedded space systems. We designed PMMA avoiding changes to commodity PCM devices, the operating system, and the existing CPU cache-memory interface, enabling plug-in replacement of a conventional DRAM main memory by one constructed with PMMA. Our architecture incorporates novel mechanisms to address PCM´s limitations including expensive write operations, asymmetric read/write latency, and limited endurance. In our evaluation we show that PMMA achieves a 60% improvement in energy-delay over a conventional DRAM main memory.
  • Keywords
    embedded systems; radiation hardening (electronics); random-access storage; space vehicle electronics; CPU cache-memory interface; CPU cache-memory organization; DRAM main memory; PCM device internal circuitry; PMMA; dynamic RAM; gamma rays; next-generation embedded space application; nonvolatile memory technology; operating system; phase-change memory; rad-hard memories; radiation hardened DRAM; radiation resistant memory technology; scalable memory technology; transient errors; Batteries; DRAM chips; Energy efficiency; Gamma rays; Operating systems; Phase change materials; Radiation hardening; Random access memory; Satellites; Space technology; computer architecture; embedded; space;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Real-Time and Embedded Technology and Applications Symposium (RTAS), 2010 16th IEEE
  • Conference_Location
    Stockholm
  • ISSN
    1080-1812
  • Print_ISBN
    978-1-4244-6690-0
  • Electronic_ISBN
    1080-1812
  • Type

    conf

  • DOI
    10.1109/RTAS.2010.40
  • Filename
    5465975