Improvement of window profile and metal step coverage for submicron CMOS devices

Author

Yu, D.C.H. ; Lee, K.H.

Author_Institution

AT&T Bell Labs., Allentown, PA, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

429

Lastpage

431

Abstract

Presents the work the authors have done to continuously improve an existing reliable window process. They demonstrate a technique which opens a window by blanket plasma reactive ion etch (RIE). Very smooth window profile is obtained and aluminum step coverage in the window is improved

Keywords

CMOS integrated circuits; VLSI; aluminium; metallisation; ohmic contacts; sputter etching; 1 micron; Al step coverage; VLSI; blanket plasma reactive ion etch; contact window profile improvement; metal step coverage; multilevel metallisation; reliable window process; silicides compatible; smooth window profile; submicron CMOS devices; Aluminum; Dielectrics; Etching; Glass; Plasma applications; Plasma devices; Plugs; Surface topography; Tungsten; Windows;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153047

Filename

153047

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2381727