• DocumentCode
    2382309
  • Title

    Fundamental limitations of high power 980nm InGaAs/GaAs pump lasers

  • Author

    Lock, D. ; Sweeney, S.J. ; Adams, A.R.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • Volume
    1
  • fYear
    2003
  • fDate
    27-28 Oct. 2003
  • Firstpage
    427
  • Abstract
    This paper shows that the output power and efficiency of 980 nm high power lasers is limited by Auger recombination which contributes 15% of the threshold current at room temperature.
  • Keywords
    III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; optical pumping; quantum well lasers; 20 degC; 980 nm; Auger recombination; InGaAs-GaAs; high power lasers; pump lasers; room temperature; Gallium arsenide; Indium gallium arsenide; Laser excitation; Photonic band gap; Power lasers; Pump lasers; Radiative recombination; Spontaneous emission; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-7888-1
  • Type

    conf

  • DOI
    10.1109/LEOS.2003.1251891
  • Filename
    1251891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2382309