• DocumentCode
    2383636
  • Title

    A novel low-frequency PIN diode

  • Author

    Drozdovskaia, Loudmila

  • Author_Institution
    MPEI, Moscow, Russia
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    592
  • Abstract
    This paper describes computer simulation results of a novel multilayer PIN diode suitable for the high-power low-frequency application. On the other hand the use of this diode in the microwave region allows one to decrease the DC reverse bias voltage. The novel diode is composed of p+ and n+ semiconductor layers separated by composite intrinsic region n-n-, forming a p+-n-n--n+ structure. It may be considered as a PIN diode
  • Keywords
    heavily doped semiconductors; p-i-n diodes; power semiconductor diodes; semiconductor device models; DC reverse bias voltage reduction; LF p-i-n diode; computer simulation; high-power LF application; highly doped layer; low-frequency PIN diode; multilayer PIN diode; p+-n-n--n+ structure; Capacitance; Charge carrier processes; Computer simulation; Doping profiles; Impedance; Nonhomogeneous media; Poisson equations; Radio frequency; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
  • Conference_Location
    Rio de Janeiro
  • Print_ISBN
    0-7803-5807-4
  • Type

    conf

  • DOI
    10.1109/IMOC.1999.866251
  • Filename
    866251
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2383636