Development of a 1 MHz MOSFET gate-driver for integrated converters

Author

de Rooij, M.A. ; Strydom, J.T. ; van Wyk, J.D. ; Beamer, P.

Author_Institution

Electron. Power Conversion Lab., Gen. Electr., Schenactady, NY, USA

Volume

4

fYear

2002

fDate

13-18 Oct. 2002

Firstpage

2622

Abstract

A gate-driver capable of switching a MOSFET at 1 MHz is proposed. The main design issues such as propagation delay and pulse width distortion have been addressed. Particular attention has been given to miniaturization of the unit with the aim of integration into an integrated power converter. The design has also focused on extensive protection features for the MOSFET, such as over-current and thermal shutdown. An experimental prototype, which can switch MOSFETs up to 800 V, has been constructed and the results presented.

Keywords

driver circuits; overcurrent protection; power MOSFET; power convertors; 1 MHz; 800 V; MOSFET gate-driver; MOSFET switching; integrated converters; integrated power converter; miniaturization; overcurrent shutdown; propagation delay; pulse width distortion; thermal shutdown; MOSFET circuits; Power MOSFET; Protection; Pulse modulation; Pulse transformers; Rectifiers; Signal design; Switches; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the

Conference_Location

Pittsburgh, PA, USA

ISSN

0197-2618

Print_ISBN

0-7803-7420-7

Type

conf

DOI

10.1109/IAS.2002.1042817

Filename

1042817