• DocumentCode
    2384235
  • Title

    Phonon and lattice dynamics in tri-gate FinFETs on (100) and (110) Si substrates

  • Author

    Mukherjee, C. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
  • fYear
    2012
  • fDate
    13-16 May 2012
  • Firstpage
    261
  • Lastpage
    264
  • Abstract
    Phonon spectra and lattice dynamics of silicon and other molecular species are studied in detail using inelastic tunneling spectroscopy (IETS) of p-type Al/SiO2/Si tri-gate FinFETs. Phonon and vibration modes are compared for FinFETs on (100) and (110) silicon substrates. The shift in phonon frequencies depending on the direction of current flow, i.e. substrate orientation, has been demonstrated. Major phonons of Si and SiO2 are identified from the IETS spectra of the tri-gate FinFETs.
  • Keywords
    MOSFET; aluminium; phonons; silicon compounds; tunnelling spectroscopy; vibrations; Al-SiO2-Si; IETS spectra; current flow direction; inelastic tunneling spectroscopy; lattice dynamics; molecular species; p-type tri-gate FinFET; phonon dynamics; phonon frequencies; phonon spectra; substrate orientation; vibration modes; FinFETs; Lattices; Phonons; Silicon; Spectroscopy; Tunneling; Vibrations; Tri-gate FinFETs; acoustic and optical phonons; inelastic tunneling spectroscopy; lattice dynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (MIEL), 2012 28th International Conference on
  • Conference_Location
    Nis
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-0237-1
  • Type

    conf

  • DOI
    10.1109/MIEL.2012.6222849
  • Filename
    6222849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2384235