DocumentCode
2385586
Title
Comparison of ESD protection capability of lateral BJT, SCR and bidirectional. SCR for hi-voltage BiCMOS circuits
Author
Vashchenko, V. ; Concannon, A. ; Beek, M. Ter ; Hopper, P.
Author_Institution
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear
2002
fDate
2002
Firstpage
181
Lastpage
184
Abstract
Triggering structures BJT, SCR and bi-directional SCR for high voltage BiCMOS process onchip ESD protection have been developed and analyzed using physical process and device simulation and pulse measurements. A ten-fold increase in the protection levels compared to the reference BJT structures have been demonstrated using a cylindrical lateral SCR and bidirectional SCR.
Keywords
BiCMOS integrated circuits; bipolar transistors; electrostatic discharge; protection; semiconductor process modelling; thyristors; ESD protection capability; bidirectional. SCR; cylindrical lateral SCR; device simulation; high voltage BiCMOS circuits; lateral BJT; on chip protection; process simulation; pulse measurements; triggering structures; BiCMOS integrated circuits; Bidirectional control; Bismuth; Circuit simulation; Conductivity; Electrostatic discharge; Protection; System-on-a-chip; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN
1088-9299
Print_ISBN
0-7803-7561-0
Type
conf
DOI
10.1109/BIPOL.2002.1042913
Filename
1042913
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