An improved model for high-frequency noise in BJTs and HBTs interpolating between the quasi-thermal approach and the correlated-shot-noise model

Author

Moller, Jesco ; Heinernann, B. ; Herzel, Frank

Author_Institution

IHP, Frankfurt, Germany

fYear

2002

fDate

2002

Firstpage

228

Lastpage

231

Abstract

This paper presents and verifies an improved model for high-frequency noise in BJTs and HBTs. Based on measurements on a SiGe:C HBT, a transition from quasithermal behavior at low currents to correlated shot noise at large currents is clearly demonstrated. The model is specially suited for 2D device simulation, since the minimum noise figure can be directly obtained from simulated Y-parameters.

Keywords

Ge-Si alloys; bipolar transistors; carbon; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; shot noise; thermal noise; 2D device simulation; BJTs; HBTs; SiGe:C; SiGe:C HBT; correlated-shot-noise model; high-frequency noise; large currents; low currents; minimum noise figure; model; quasi-thermal approach; simulated Y-parameters; Circuit noise; Circuit simulation; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Integrated circuit noise; Noise figure; Noise measurement; Scattering parameters; Thermodynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

ISSN

1088-9299

Print_ISBN

0-7803-7561-0

Type

conf

DOI

10.1109/BIPOL.2002.1042924

Filename

1042924