Effect of Fluorine Incorporation on 1/f Noise of HfSiON FETs for Future Mixed-Signal CMOS

Author

Yasuda, Yuri ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

An effect of fluorine incorporation into HfSiON on 1/f noise is shown for the first time. Fluorine effect on 1/f noise for SiON and HfSiON devices differ in that F does not improve the HfSiON N-FET 1/f noise. Apparently, the interface traps created by Hf close to the conduction band cannot be passivated by fluorine. For future analog/mixed -signal applications, HfSiON P-FET is expected to limit noise performance even though F can improve its noise

Keywords

1/f noise; CMOS integrated circuits; field effect transistors; fluorine; hafnium compounds; interface states; mixed analogue-digital integrated circuits; oxygen compounds; semiconductor device noise; silicon compounds; 1/f noise; F; FET; HfSiON; conduction band; field effect transistor; fluorine effect; fluorine incorporation; interface traps; mixed -signal applications; mixed-signal CMOS; passivation; Capacitance; Channel bank filters; Dielectrics; FETs; Hafnium; Niobium compounds; Noise measurement; Passivation; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346761

Filename

4154180