Promising a-Si:H TFTs with High Mechanical Reliability for Flexible Display

Author

Lee, M.H. ; Ho, K.-Y. ; Chen, P.-C. ; Cheng, C.-C. ; Chang, S.T. ; Tang, M. ; Liao, M.H. ; Yeh, Y.-H.

Author_Institution

Display Technol. Center, Ind. Technol. Res. Inst., Hsinchu

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The high mechanical reliability of a-Si:H TFTs have been fabricated on plastic substrate for flexible display applications. The promising TFT backplane has been successfully applied for AMLCD on colorless polyimide (PI) substrate. The tri-layer of Ti/Al/Ti with 10 mum width are used as scan lines and data lines to replace Cr for stress compensation, and can sustain mechanical bending cycles. The TFTs at 200degC on PI substrate have superior stability with external strain and bending cycles. The redistribution of trap states is analyzed by modeling simulation. The promising a-Si:H TFTs on PI substrate after bending cycles still have superior operation and electrical stress stability and make it possible for AMOLED applications. The Si-based TFTs with high mechanical reliability are highly potential candidate for flexible active-matrix display beyond FPD (flat panel display) generation

Keywords

LED displays; aluminium; elemental semiconductors; flexible electronics; silicon; thin film transistors; titanium; 10 micron; 200 C; AMLCD; AMOLED applications; Si:H; TFT backplane; Ti-Al-Ti; bending cycle; colorless polyimide substrate; data lines; electrical stress stability; flat panel display; flexible active-matrix display; mechanical bending cycles; mechanical reliability; plastic substrate; scan lines; strain cycle; stress compensation; thin film transistors; trap states; Active matrix liquid crystal displays; Backplanes; Capacitive sensors; Chromium; Flat panel displays; Plastics; Polyimides; Stability; Stress; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346767

Filename

4154186