New RF intrinsic parameters extraction procedure for advanced MOS transistors

Author

Tinoco, J.C. ; Martinez-Lopez, A.G. ; Emam, M. ; Raskin, J. -P

Author_Institution

Dept. de Ing. en Telecomun., Univ. Nac. Autonoma de Mexico, Mexico, Mexico

fYear

2010

fDate

22-25 March 2010

Firstpage

86

Lastpage

89

Abstract

A new extraction method of the intrinsic parameters of the small-signal equivalent circuit model of SOI MOS transistors (MOSFET) is presented. This new method does not need the previous knowledge of the extrinsic series resistances, moreover, it is possible to directly determine the intrinsic parameters at the bias point of interest. Floating-Body SOI MOSFETs are analyzed using this method.

Keywords

MOSFET; equivalent circuits; silicon-on-insulator; RF intrinsic parameters extraction procedure; SOI MOS transistors; floating-Body SOI MOSFET; small-signal equivalent circuit model; CMOS technology; Capacitance; Electrical resistance measurement; Equivalent circuits; MOSFET circuits; Parameter extraction; Radio frequency; Scattering parameters; Silicon on insulator technology; Transmission line matrix methods; Intrinsic parameters; MOSFET; RF characterization; SOI technology; small-signal equivalent circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on

Conference_Location

Hiroshima

Print_ISBN

978-1-4244-6912-3

Electronic_ISBN

978-1-4244-6914-7

Type

conf

DOI

10.1109/ICMTS.2010.5466853

Filename

5466853