• DocumentCode
    2386262
  • Title

    Prediction and Control of NBTI -- Induced SRAM Vccmin Drift

  • Author

    Lin, J.C. ; Oates, A.S. ; Tseng, H.C. ; Liao, Y.P. ; Chung, T.H. ; Huang, K.C. ; Tong, P.Y. ; Yau, S.H. ; Wang, Y.F.

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Hsinchu
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The paper presents a comprehensive study of the impact of NBTI on SRAM Vccmin stability. The authors describe a novel simulation technique to predict the between - die statistical distribution of Vccmin drift due to NBTI. While the drift is a fundamental phenomenon, it was shown that by cell design and transistor process optimization, the drift can be reduced to tolerable levels
  • Keywords
    SRAM chips; integrated circuit modelling; integrated circuit reliability; statistical distributions; thermal stability; NBTI control; NBTI prediction; SRAM; between-die statistical distribution; cell design; negative bias temperature instability; transistor process optimization; voltage drift; Degradation; Design optimization; Niobium compounds; Predictive models; Process design; Random access memory; Stability; Statistical distributions; Stress; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346779
  • Filename
    4154198
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2386262