DocumentCode
2386405
Title
Pulsed measurement method for characterizing chemical solutions using nanowire field effect transistors
Author
Mescher, Marleen ; Marcelis, Bout ; De Wild, Marco ; Klootwijk, Johan H.
Author_Institution
Mater. Innovation Inst. M2i, Netherlands
fYear
2010
fDate
22-25 March 2010
Firstpage
44
Lastpage
47
Abstract
This paper presents a method for characterizing chemical solutions using nanowire field effect transistors. A pulsed gate potential method is used to prevent instabilities related to the dynamics of ions and other charged species present in the solution. Applying this method realizes a significant increase of the stability of the drain current versus gate potential characteristics of the devices, enabling reproducible characterization of chemical solutions with nanowire field effect transistors in aqueous environments.
Keywords
chemical sensors; elemental semiconductors; field effect transistors; nanowires; pulse measurement; silicon; Si; aqueous environments; charged species; chemical solutions; drain current; gate potential characteristics; ion dynamics; nanowire field effect transistors; pulsed gate potential method; pulsed measurement method; Chemical and biological sensors; Chemical engineering; Chemical sensors; Chemical technology; FETs; Nanobioscience; Nanoscale devices; Pulse measurements; Sensor phenomena and characterization; Threshold voltage; FET; Nanowire; fluidics; pulsed measurements; sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location
Hiroshima
Print_ISBN
978-1-4244-6912-3
Electronic_ISBN
978-1-4244-6914-7
Type
conf
DOI
10.1109/ICMTS.2010.5466863
Filename
5466863
Link To Document