On the Recovery of Simulated Plasma Process Induced Damage in High- κ Dielectrics

Author

Pantisano, L. ; O´ Sullivan, B.J. ; Roussel, P.J. ; Degraeve, R. ; Groeseneken, G. ; DeGendt, S. ; Heyns, M.

Author_Institution

IMEC, Leuven

fYear

2006

fDate

1-4 May 2006

Firstpage

1

Lastpage

4

Abstract

A detailed analysis of the ability of high-k materials to recover from plasma damage, as simulated by Fowler-Nordheim stress is presented. Forming gas and high temperature rapid thermal anneal (RTA) steps are compared to determine their efficiency at trap recovery. The annealing responses of the technologically relevant HfSiON and HfO₂ materials (EOT<2nm) are correlated with structural differences in these dielectrics, as well as the trap generation rate, centroids and defect de-passivation. We show that plasma damage can be successfully recovered for HfO₂ by high temperature annealing

Keywords

electron traps; hafnium compounds; high-k dielectric thin films; rapid thermal annealing; reliability; silicon compounds; Fowler-Nordheim stress; HfO₂; HfSiON; high-k dielectrics; high-k materials; plasma damage; rapid thermal annealing; simulated plasma process; trap recovery; Analytical models; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Plasma materials processing; Plasma simulation; Plasma temperature; Rapid thermal annealing; Rapid thermal processing; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on

Conference_Location

Padova

Print_ISBN

1-4244-0097-X

Type

conf

DOI

10.1109/ICICDT.2006.220803

Filename

1669390