• DocumentCode
    2386933
  • Title

    Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain

  • Author

    Irisawa, Toshifumi ; Numata, Toshinori ; Tezuka, Tsutomu ; Sugiyama, Naoharu ; Takagi, Shin-ichi

  • Author_Institution
    MIRAI-ASET, Kawasaki
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Electron transport properties in biaxially strained UTB MOSFETs and uniaxially strained tri-gate MOSFETs are experimentally investigated. It is found that the strain is still effective even in UTB regime and the mobility enhancement of 1.4 against control thick (20 nm) SOI is preserved in devices with TSoi = 2.4 nm. We also demonstrate 2.0x mobility enhancement in tri-gate nMOSFETs with uniaxial <110> tensile strain that is favored not only on (100) but also on (110) sidewall
  • Keywords
    MOSFET; electron transport theory; silicon-on-insulator; SOI nMOSFET; biaxial strain; electron transport properties; mobility enhancement; uniaxial strain; CMOS technology; Capacitive sensors; Degradation; Electrons; MOSFETs; Scattering; Silicon on insulator technology; Tensile strain; Thickness control; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346811
  • Filename
    4154230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2386933