• DocumentCode
    2387525
  • Title

    High quality ion implanter; EXCEED3000AH-Nx for 45nm beyond I/I process<Beam Size and Angle>

  • Author

    Tanjyo, Masayasu ; Sakai, Shigeki ; Ikejiri, Tadashi ; Tanaka, Kohei ; Koga, Yuji ; Kobayashi, Tomoaki ; Matsumoto, Takao ; Nakaya, Makoto ; Kibi, Yasuhiro ; Yamashita, Takatoshi ; Nagayama, Tsutomu ; Hamamoto, Nariaki ; Umisedo, Sei ; Yuasa, Satoru ; Nai

  • Author_Institution
    Nissin Ion Equipment Co., Ltd., Kyoto
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    31
  • Lastpage
    35
  • Abstract
    For the 45 nm beyond advanced LSI mass-production, accurate dose and beam angle control for the implantation process is highly required. For the purpose the ion beam size and angle monitor was developed and installed in EXCEEDS 000AH new version medium current ion implanter.. The measured results shows the beam size and angle increased at the beam energy decreased, especially for the Y direction beam divergence is severe. As the solution, further development items are present
  • Keywords
    MOSFET; ion beam applications; ion implantation; large scale integration; EXCEEDS 000AH-Nx; MOSFET; angle measurement system; beam energy; beyond 45 nm devices; ion beam size measurement; ion implantation; medium current ion implanter; Electrodes; Fabrication; Ion beams; MOSFET circuits; Particle beams; Production; Size control; Telephony; Tin; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2006. IWJT '06. International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0047-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2006.220854
  • Filename
    1669441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2387525