DocumentCode
2387907
Title
Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies
Author
Zhao, Weifeng ; Jin, Niu ; Chen, Guang ; Wang, Liang ; Adesida, Ilesanmi
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Ag-ohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 mum demonstrated excellent DC and RF characteristics
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; iridium; ohmic contacts; rapid thermal annealing; silver; 0.2 micron; Ag; HEMT; InAlAs-InGaAs-InP; Ir; high electron mobility transistors; monolithic integration; ohmic contacts; rapid thermal annealing; Annealing; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Monolithic integrated circuits; Passivation; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0439-8
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346855
Filename
4154274
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