DocumentCode
2388312
Title
High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs
Author
Saraswat, Krishna C. ; Chui, Chi On ; Kim, Donghyun ; Krishnamohan, Tejas ; Pethe, Abhijit
Author_Institution
Dept. of Electr. Eng., Stanford Univ., CA
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si
Keywords
III-V semiconductors; MOSFET; elemental semiconductors; germanium; nanotechnology; silicon; GaAs; Ge; III-V materials; InAs; InSb; Si; channel materials; high mobility materials; nanoscale MOSFET; Capacitive sensors; Charge carrier processes; Conducting materials; Dielectric materials; Gallium arsenide; III-V semiconductor materials; MOSFETs; Nanoscale devices; Quantization; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346871
Filename
4154290
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