Elimination of Floating body Effect and Thermal Instability in a Nano Quasi-SOI MOSFET with π-shaped Semiconductor Layer

In this paper, a new device structure called the quasi-SOI MOSFET with pi-shaped semiconductor conductive layer is proposed and demonstrated. In this structure, the pi-shaped source/drain layer is formed by the block oxide which consists of three separate oxide islands under the source, the drain, and the body regions, respectively. In other words, due to the three separate oxide islands forming two paths from source/drain to substrate, the generated holes and heat can be eliminated from this source/drain-tied scheme, thus, the proposed quasi-SOI structure shows to improve the kink effect and the self-heating problem as compared with that of conventional SOI structures. Moreover, owing to that the block oxide is utilized to restrict the electric field built between body and source/drain region, the ultra-short-channel effect is also diminished. Besides, our structure is based on the bulk wafer, thus, the cost can be cheaper than the SOI wafer