• DocumentCode
    2388578
  • Title

    Fabrication of Ti-Al Ohmic Contacts to N-type 6H-SiC with P+Ion Implantation

  • Author

    Guo, Hui ; Zhang, Yimen ; Zhang, Yuming

  • Author_Institution
    Microelectron. Sch., Xidian Univ., Xi´´an
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    265
  • Lastpage
    267
  • Abstract
    The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance rhoc as low as 8.64 times 10-6 Omegacm2 is achieved after annealing in N2 for 5 min at 900degC. The result for sheet resistance Rsh of the implanted layers is 975 Omega/square. The low resistance contact would be attributed to the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing
  • Keywords
    aluminium; annealing; contact resistance; gold; ion implantation; ohmic contacts; phosphorus; semiconductor doping; semiconductor epitaxial layers; semiconductor-metal boundaries; silicon compounds; titanium; 5 min; 900 degC; Au-Ti-Al-SiC:P; P+ ion implantation; contact resistance; n-type 6H-SiC epilayer; ohmic contacts; sheet resistance; thermal annealing; transfer length method; Annealing; Contact resistance; Fabrication; Gold; Ion implantation; Ohmic contacts; Photonic band gap; Silicon carbide; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2006. IWJT '06. International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0047-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2006.220907
  • Filename
    1669494
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388578