Rapid thermal annealing of arsenic implanted silicon wafers

Author

Yoo, Woo Sik ; Fukada, Takashi ; Setokubo, Tsuyoshi ; Aizawa, Kazuo ; Yamamoto, Jiro ; Komatsubara, Ryuichi

Author_Institution

WaferMasters, Inc., San Jose, CA, USA

fYear

2001

fDate

29-30 Nov. 2001

Firstpage

71

Lastpage

74

Abstract

Rapid thermal annealing of /sup 75/As/sup +/ implanted Si wafer (200mm in diameter) was done using a lamp-based RTP system and a single wafer rapid thermal furnace system under 1 atm N/sub 2/ atmosphere to mainly understand electrical activation and dopant diffusion phenomena. The implant energy and does were varied in the range of 3keV/spl sim/70keV and 1/spl times/10/sup 15//spl sim/1/spl times/10/sup 16/ atoms/cm/sup 2/, respectively. Average sheet resistance and its uniformity of /sup 75/As/sup +/ implanted wafers were measured after annealing. Arsenic depth profiles were investigated using the secondary ion mass spectroscopy.

Keywords

arsenic; diffusion; doping profiles; elemental semiconductors; ion implantation; rapid thermal annealing; secondary ion mass spectra; silicon; 1 atm; 200 mm; 3 to 70 keV; N/sub 2/ atmosphere; Si:As; arsenic implanted silicon wafer; depth profile; dopant diffusion; electrical activation; lamp-based RTP system; rapid thermal annealing; secondary ion mass spectroscopy; sheet resistance; single wafer rapid thermal furnace; Atmosphere; Atmospheric measurements; Atomic measurements; Electrical resistance measurement; Implants; Rapid thermal annealing; Rapid thermal processing; Silicon carbide; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-019-4

Type

conf

DOI

10.1109/IWJT.2001.993829

Filename

993829