DocumentCode
2389209
Title
Performance of surface-mount ceramic and solid tantalum capacitors for cryogenic applications
Author
Hammoud, Ahmad ; Gerber, Scott ; Patterson, Richard L. ; MacDonald, T.L.
Author_Institution
Dynacs Eng. Corp., NASA Lewis Res. Center, Cleveland, OH, USA
fYear
1998
fDate
25-28 Oct 1998
Firstpage
572
Abstract
Low temperature electronics are of great interest for space exploration programs. These include missions to the outer planets, earth-orbiting and deep-space probes, remote-sensing and communication satellites. Terrestrial applications would also benefit from the availability of low temperature electronics. Power components capable of low temperature operation would, thus, enhance the technologies needed for the development of advanced power systems suitable for use in harsh environments. In this work, ceramic and solid tantalum capacitors were evaluated in terms of their dielectric properties as a function of temperature and at various frequencies. The surface-mount devices were characterized in terms of their capacitance stability and dissipation factor in the frequency range of 50 Hz to 100 kHz at temperatures ranging from room temperature (20°C) to about liquid nitrogen temperature (-190°C). The results are discussed and conclusions made concerning the suitability of the capacitors investigated for low temperature applications
Keywords
ceramic capacitors; cryogenic electronics; electrolytic capacitors; space vehicle electronics; surface mount technology; tantalum; 20 to -190 C; 50 Hz to 100 kHz; Ta; capacitance stability; ceramic capacitor; cryogenic applications; dielectric properties; dissipation factor; harsh environment; low temperature electronics; power component; solid tantalum capacitor; space applications; surface mount device; Capacitors; Ceramics; Frequency; Planets; Power system stability; Probes; Remote sensing; Solids; Space exploration; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena, 1998. Annual Report. Conference on
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-5035-9
Type
conf
DOI
10.1109/CEIDP.1998.732962
Filename
732962
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