• DocumentCode
    2389397
  • Title

    Dispersive to non-dispersive transition in the drift mobility of F8BT based-thin-film devices

  • Author

    Faria, G.C. ; Faria, R.M. ; deAzevedo, E.R. ; von Seggern, H.

  • Author_Institution
    Inst. de Fis. de Sao Carlos, Univ. de Sao Paulo, São Carlos, Brazil
  • fYear
    2011
  • fDate
    28-31 Aug. 2011
  • Firstpage
    9
  • Lastpage
    10
  • Abstract
    Here we present a study of the temperature dependence of charge transport in spin-coated F8BT thin films. We have utilized the "Photo-Carrier Extraction by Linearly Increasing Voltage" (Photo-CELIV) technique3 which is able to measure charge carrier mobilities in F8BT thin film devices. To analyze the results we made use of the Gaussian Disorder Model (GDM),4 in which the electronic conduction is assumed to occur via thermally activated hopping through a Gaussian Density of States (DOS).
  • Keywords
    Gaussian processes; spin coating; thin film devices; F8BT based-thin-film devices; Gaussian disorder model; Photo-CELIV; charge transport; drift mobility; electronic conduction; linearly increasing voltage; photo-carrier extraction; spin-coated F8BT thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets (ISE), 2011 14th International Symposium on
  • Conference_Location
    Montpellier
  • ISSN
    2153-3253
  • Print_ISBN
    978-1-4577-1023-0
  • Type

    conf

  • DOI
    10.1109/ISE.2011.6084956
  • Filename
    6084956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2389397