Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer

Author

Ok, Injo ; Kim, H. ; Zhang, M. ; Lee, T. ; Zhu, F. ; Yu, L. ; Koveshnikov, S. ; Tsai, W. ; Tokranov, V. ; Yakimov, M. ; Oktyabrsky, S. ; Lee, Jack C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

In this work, using Si interface passivation layer (IPL) we present the electrical characteristics of TaN/HfO₂/GaAs both p-and n-MOSFET made on GaAs substrates with excellent electrical and reliability characteristics, thin EOT (~2.3-3.0nm), low frequency dispersion (< 5%) and high maximum mobility (1213 cm²/V-s) with high temperature PMA for n-MOSFET on undoped GaAs. Good inversion behavior with low D_it on lightly doped p-type GaAs has been obtained. P-channel GaAs high-k MOSFETs with excellent peak mobility have also been demonstrated

Keywords

III-V semiconductors; MOSFET; gallium arsenide; hafnium compounds; passivation; semiconductor doping; silicon; tantalum compounds; TaN-HfO₂-GaAs; interface passivation layer; p-type substrates; self-aligned n-channel MOSFET; self-aligned p-channel MOSFET; undoped substrates; Electric variables; Frequency; Gallium arsenide; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Passivation; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346742

Filename

4154343