Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (γ) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10 nm

Author

Ohtou, Tetsu ; Saraya, Takuya ; Shimokawa, Kimiaki ; Doumae, Yasuhiro ; Nagatomo, Yoshiki ; Ida, Jiro ; Hiramoto, Toshiro

Author_Institution

Inst. of Ind. Sci., Tokyo Univ.

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The superior characteristics of variable body-factor (γ) FD SOI MOSFETs which we have recently proposed are experimentally demonstrated. Devices were fabricated on a SOI wafer with BOX thickness of 10 nm by using the 140 nm technology. Their advantages, small leakage-current in the standby-state and improved delay in the active-state, are clearly validated by the measurements. This scheme is expected to be promising for future low-power, high-performance VLSIs

Keywords

MOSFET; leakage currents; nanoelectronics; silicon-on-insulator; 10 nm; extremely thin BOX; fully-depleted SOI MOSFET; improved delay; small leakage-current; superior characteristics; variable body-factor; Circuit optimization; Circuit simulation; Degradation; Delay; Geometry; MOSFETs; Parasitic capacitance; Research and development; Substrates; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346922

Filename

4154357