Floating Islands and Thick Bottom Oxide Trench Gate MOSFET (FITMOS) with Passive Hole Gate -60V Ultra Low On-Resistance Novel MOSFET-

Author

Takaya, Hidefumi ; Miyagi, Kyosuke ; Hamada, Kimimori

Author_Institution

Toyota Motor Corp., Aichi

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

A MOSFET structure called a FITMOS has been successfully developed that exhibits record-low loss in the 60V breakdown voltage range (Kasakian and Perrault, 2001). The device has a body diode with superior reverse recovery characteristics and exhibits an extremely small value for RonQgd. The distinctive features of this device are the use of floating P islands formed by self-alignment and trench gates with a thick oxide layer at the bottom. However, during AC operation, the charges in the floating P islands become greater, increasing the on-resistance due to the JFET effect. This issue was solved by forming passive hole gates in the end walls of the trenches. The on-resistance under AC operation is equivalent to the on-resistance under DC operation

Keywords

power MOSFET; semiconductor device breakdown; 60 V; FITMOS; JFET effect; body diode; floating islands; passive hole gate; self alignment; superior reverse recovery characteristics; trench gate MOSFET; trench gates; ultra low on-resistance MOSFET; Automobiles; Automotive engineering; Circuit simulation; Diodes; Immune system; MOSFET circuits; Power MOSFET; Power electronics; Space charge; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346934

Filename

4154369