DocumentCode
2391495
Title
Noise Modeling in Lateral Asymmetric MOSFET
Author
Roy, Ananda S. ; Chauhan, Yogesh S. ; Enz, Christian C. ; Sallese, Jean-Michel
Author_Institution
Ecole Polytechnique Federale de Lausanne
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
In this work the authors present, for the first time, an analytical noise modeling methodology in presence of lateral asymmetry. The authors also show that noise properties of lateral asymmetric (LA) MOSFETs are considerably different from the prediction of conventional Klaassen-Prins (KP) based methods and at low gate voltages; they can overestimate the noise by 2-3 orders of magnitude
Keywords
MOSFET; semiconductor device models; semiconductor device noise; Klaassen-Prins methods; analytical noise modeling; lateral asymmetric MOSFET; low gate voltages; Analytical models; Councils; Degradation; Doping; Equations; Impedance; Low voltage; MOSFET circuits; Predictive models; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346994
Filename
4154429
Link To Document