DocumentCode
2391627
Title
Hole Trapping and de-Trapping Effects in LDMOS Devices under Dynamic Stress
Author
Moens, P. ; Bosch, G. Van ; Tack, M.
Author_Institution
AMI Semicond., Oudenaarde
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
The effects of hole trapping and de-trapping in lateral DMOS transistors under hot carrier stress are studied. It is shown that the stress sequence has an important effect on how degradation is induced in the device. Experimental evidence is provided that hot hole trapping in the device birds beak is a dynamic effect. A model is proposed
Keywords
MOSFET; hole traps; hot carriers; LDMOS devices; de-trapping effects; dynamic stress; hole trapping; hot carrier stress; lateral DMOS transistors; Ambient intelligence; Automotive engineering; Birds; Charge pumps; Degradation; Hot carriers; Semiconductor device modeling; Stress; Vehicle dynamics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346999
Filename
4154434
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