DocumentCode
2392423
Title
MOSFET mobility degradation modelling
Author
Babarada, F. ; Profirescu, M.D. ; Rusu, A.
Author_Institution
Univ. "Politehnica" of Bucharest, Romania
Volume
2
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
The design of linear analog circuits lacks models for state-of-the-art MOS transistors to accurately describe distortion effects. This is mainly due to inaccurate modelling of the mobility degradation effect i.e. the dependence of carrier mobility in the inversion layer on the normal electric (gate) field. A new mobility relation in agreement with experiment was obtained using quantum mechanical transport analysis.
Keywords
MOSFET; carrier mobility; semiconductor device breakdown; semiconductor device models; MOSFET mobility degradation modelling; carrier mobility; distortion effects; inversion layer; linear analog circuits; mobility degradation effect; normal electric field; quantum mechanical transport analysis; Analog circuits; Carrier confinement; Charge carrier processes; Degradation; Doping; Light scattering; MOSFET circuits; Particle scattering; Quantum mechanics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1252440
Filename
1252440
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