Thermally stimulated currents in holmium oxide-based thin-film capacitors

Author

Wiktorczyk, T.

Author_Institution

Inst. of Phys., Tech. Univ. of Wroclaw, Poland

fYear

1991

fDate

25-27 Sep 1991

Firstpage

675

Lastpage

680

Abstract

Results of experimental examinations of vacuum-evaporated aluminum/holmium oxide/aluminum thin-film thermoelectrets by the method of thermally stimulated currents are presented. All measurements were carried out in the temperature region from 297 K to 500 K with the help of an automated microcomputer-based system. The TSD (thermally stimulated depolarization current) and TSP (thermally stimulated polarization current) curves obtained under different measurement conditions exhibit only a single peak for the temperatures between 380 K and 406 K. The trapping levels with the activation energy of 0.5-0.7 eV are responsible for the observed results

Keywords

aluminium; electron traps; hole traps; holmium compounds; metal-insulator-metal structures; thermally stimulated currents; thermoelectrets; thin film capacitors; Al-HoO_x-Al; activation energy; single peak; thermally stimulated currents; thermally stimulated depolarization current; thermally stimulated polarization current; thin-film capacitors; thin-film thermoelectrets; trapping levels; Capacitors; Chemicals; Conductivity measurement; Current measurement; Dielectric thin films; Electrons; Optical films; Performance evaluation; Thermal conductivity; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 1991. (ISE 7) Proceedings., 7th International Symposium on (Cat. No.91CH3029-6)

Conference_Location

Berlin

Print_ISBN

0-7803-0112-9

Type

conf

DOI

10.1109/ISE.1991.167293

Filename

167293