DocumentCode
2393759
Title
Proposal of quantum well gate insulating (QWGI) structures for band offset engineering from first-principles calculations
Author
Schimizu, Tatsuo ; Yamaguchi, Takeshi
Author_Institution
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
86
Lastpage
88
Abstract
The objective of this study is to provide a method to make the conduction band (CB) offset large in order to utilize STO-related materials as a gate insulator: to propose a new nanoscaled quantum-well structure of a gate insulator, using STO-related materials with large /spl epsiv/.
Keywords
conduction bands; energy gap; insulating thin films; quantum wells; strontium compounds; STO-related materials; SrTiO/sub 3/; conduction band offset; first-principles calculations; gate insulator; quantum well gate insulating structures; Conducting materials; Dielectric constant; Dielectrics and electrical insulation; Energy consumption; High K dielectric materials; High-K gate dielectrics; Lattices; Molecular beam epitaxial growth; Photonic band gap; Proposals;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159190
Filename
1252515
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