Extending the life of N/O stack gate dielectric with gate electrode engineering

Author

Xiang, Qi ; Krivokapic, Zoran ; Maszara, Witek ; Lin, Ming-Ren

Author_Institution

Technol. Dev. Group, Adv. Micro Devices Inc., Sunnyvale, CA, USA

fYear

2003

fDate

6-7 Nov. 2003

Firstpage

134

Lastpage

139

Abstract

Nitride/oxynitride (N/O) stack gate dielectrics show significant leakage reduction and strong boron penetration resistance as compared to oxynitrides. The life of the N/O stack can be further extended by gate electrode engineering. With pre-doped poly-Si gates for both N- and P-MOS devices, poly-Si gate depletion can be minimized and inversion Tox can be reduced. Employment of NiSi can further reduce inversion Tox by minimizing gate dopant deactivation. In addition, a fully-silicided (FUSI) NiSi metal gate electrode totally eliminates poly-Si gate depletion and reduces the inversion Tox by 4-6A. Both FDSOI devices and strained Si devices with N/O stack and FUSI metal gate showed performance improvements and no degradation in gate dielectric reliability.

Keywords

MOS capacitors; MOSFET; dielectric thin films; elemental semiconductors; nickel alloys; silicon; silicon alloys; NMOS devices; NiSi; NiSi metal gate electrode; PMOS devices; Si; boron penetration resistance; gate dielectric reliability; gate dopant deactivation; gate electrode engineering; leakage reduction; nitride-oxynitride stack gate dielectrics; poly Si gate depletion; strained Si devices; Boron; Degradation; Dielectric devices; Electrodes; Employment; Gate leakage; Nitrogen; Stress; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on

Conference_Location

Toyko, Japan

Print_ISBN

4-89114-037-2

Type

conf

DOI

10.1109/IWGI.2003.159200

Filename

1252525