• DocumentCode
    2394130
  • Title

    Effects of nitrogen incorporation HfAlOx films on gate leakage current from XPS study of Hf bonding states

  • Author

    Nishimura, T. ; Iwamoto, K. ; Tominaga, K. ; Yasuda, T. ; Mizubayashi, W. ; Fujii, S. ; Nabatame, T. ; Toriumi, A.

  • Author_Institution
    Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci & Technol., Tsukuba, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    180
  • Lastpage
    185
  • Abstract
    In this paper, we focus on the impact of N incorporation on the gate leakage current and the modification of the bonding configuration of HfAlO/sub x/(N) network.
  • Keywords
    MOS capacitors; MOSFET; X-ray photoelectron spectra; aluminium compounds; dielectric materials; dielectric thin films; elemental semiconductors; hafnium compounds; leakage currents; silicon; Hf bonding states; HfAlO/sub x/N-Si; XPS; gate leakage current; nitrogen incorporation; nitrogen incorporation HfAlO/sub x/ films; Amorphous materials; Annealing; Bonding; Crystallization; Hafnium; High K dielectric materials; High-K gate dielectrics; Leakage current; Materials science and technology; Nitrogen;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159208
  • Filename
    1252533
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2394130