DocumentCode
2394395
Title
Carbon nanotube technologies for future ULSIs
Author
Awano, Yuji ; Yokoyama, Naoki
Author_Institution
Nanotechnol. Res. Center, Fujistu Labs. Ltd., Atsugi, Japan
fYear
2003
fDate
6-8 Oct. 2003
Firstpage
40
Lastpage
41
Abstract
In this paper, we discuss CNT technologies for future ULSIs, in particular, CNT via interconnects and CNT-FET technologies, including single electron transistors.
Keywords
ULSI; carbon nanotubes; current density; field effect transistors; integrated circuit interconnections; nanotechnology; single electron transistors; C; FET; ULSI; carbon nanotube; interconnects; single electron transistors; Ballistic transport; Carbon nanotubes; Conducting materials; Current density; Nanotechnology; Ohmic contacts; Temperature; Thermal conductivity; Transconductance; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-7765-6
Type
conf
DOI
10.1109/VTSA.2003.1252546
Filename
1252546
Link To Document