Analysis of dynamic characteristics in a-Si TFT structures (for active-matrix LCD)

Author

Kitazawa, Tomoko ; Shibusawa, Makoto ; Higuchi, Toyoki

Author_Institution

Toshiba Corp., Yokohama, Japan

fYear

1991

fDate

15-17 Oct. 1991

Firstpage

89

Lastpage

92

Abstract

Active-matrix LCDs (liquid crystal displays) addressed by a-Si (amorphous silicon) TFTs (thin-film transistors) are being developed for graphic displays such as computer terminals. Three types of TFTs, a back-channel-etched TFT, a trilayered TFT, and a self-aligned TFT, have been developed. The authors describe the dynamic characteristics of these TFTs, especially level shift in pixel voltage. First, the dependence of the level shift voltage both on drain voltage and on gate pulse delay is demonstrated. The difference of the level shift caused by the TFT structure is then clarified. Then these results are compared to those of SPICE simulation.<>

Keywords

amorphous semiconductors; elemental semiconductors; liquid crystal displays; silicon; thin film transistors; SPICE simulation; active-matrix LCD; amorphous Si thin film transistors; back-channel-etched TFT; drain voltage; dynamic characteristics; gate pulse delay; graphic displays; level shift; pixel voltage; self-aligned TFT; trilayered TFT; Active matrix liquid crystal displays; Amorphous silicon; Computer displays; Computer graphics; Computer peripherals; Delay; Liquid crystal displays; SPICE; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Display Research Conference, 1991., Conference Record of the 1991 International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0213-3

Type

conf

DOI

10.1109/DISPL.1991.167440

Filename

167440