DocumentCode
2399412
Title
AH-JFET Amplifiers For Low Noise Applications
Author
Buttler, W. ; Hosticka, B.J.
Author_Institution
Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
fYear
1989
fDate
20-22 Sept. 1989
Firstpage
133
Lastpage
136
Abstract
In this contribution we present amplifiers for low noise applications. They have been designed using only N-and P-channel CMOS-compatible junction field effect transistors (JFET) for biasing, amplification, and switching. Using these components a very low noise amplifier system was integrated which consists of a charge sensitive preamplifier and an SC noise filter. Since all active components in this circuit are made of CMOS-compatible JFET´s, the amplifier system is also radiation hardened.
Keywords
CMOS integrated circuits; junction gate field effect transistors; low noise amplifiers; radiation hardening (electronics); semiconductor device noise; CMOS-compatible junction field effect transistors; SC noise filter; all-JFET amplifiers; charge sensitive preamplifier; low noise amplifier system; low noise applications; Active filters; Capacitors; Cutoff frequency; Inverters; Low pass filters; Low-noise amplifiers; Resistors; Transconductance; Transconductors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1989. ESSCIRC '89. Proceedings of the 15th European
Conference_Location
Vienna
Print_ISBN
3-85403-101-7
Type
conf
DOI
10.1109/ESSCIRC.1989.5468140
Filename
5468140
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