• DocumentCode
    2400312
  • Title

    IGBT and PN junction diode loss modeling for system simulations

  • Author

    Cassimere, Brandon ; Sudhoff, Scott D. ; Cassimere, Brandon ; Aliprantis, Dionysios C. ; Swinney, M.D.

  • Author_Institution
    Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN
  • fYear
    2005
  • fDate
    15-15 May 2005
  • Firstpage
    941
  • Lastpage
    949
  • Abstract
    An accurate and numerically efficient method of calculating semiconductor losses in drive systems is set forth. In the proposed approach, switching events are modeled by idealized voltage and current waveforms that yield the appropriate switching energy loss. The waveforms are specifically designed to allow for large time steps, thus retaining the computational efficiency of conventional ideal-switch time-domain simulations often used for system studies
  • Keywords
    insulated gate bipolar transistors; losses; p-n junctions; power semiconductor diodes; time-domain analysis; IGBT; PN junction; computational efficiency; diode loss modeling; drive systems; ideal-switch time-domain simulations; semiconductor losses; switching energy loss; Computational efficiency; Computational modeling; Insulated gate bipolar transistors; Inverters; Power system modeling; Semiconductor diodes; Switching frequency; Switching loss; Time domain analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electric Machines and Drives, 2005 IEEE International Conference on
  • Conference_Location
    San Antonio, TX
  • Print_ISBN
    0-7803-8987-5
  • Electronic_ISBN
    0-7803-8988-3
  • Type

    conf

  • DOI
    10.1109/IEMDC.2005.195835
  • Filename
    1531453