DocumentCode
2400312
Title
IGBT and PN junction diode loss modeling for system simulations
Author
Cassimere, Brandon ; Sudhoff, Scott D. ; Cassimere, Brandon ; Aliprantis, Dionysios C. ; Swinney, M.D.
Author_Institution
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN
fYear
2005
fDate
15-15 May 2005
Firstpage
941
Lastpage
949
Abstract
An accurate and numerically efficient method of calculating semiconductor losses in drive systems is set forth. In the proposed approach, switching events are modeled by idealized voltage and current waveforms that yield the appropriate switching energy loss. The waveforms are specifically designed to allow for large time steps, thus retaining the computational efficiency of conventional ideal-switch time-domain simulations often used for system studies
Keywords
insulated gate bipolar transistors; losses; p-n junctions; power semiconductor diodes; time-domain analysis; IGBT; PN junction; computational efficiency; diode loss modeling; drive systems; ideal-switch time-domain simulations; semiconductor losses; switching energy loss; Computational efficiency; Computational modeling; Insulated gate bipolar transistors; Inverters; Power system modeling; Semiconductor diodes; Switching frequency; Switching loss; Time domain analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electric Machines and Drives, 2005 IEEE International Conference on
Conference_Location
San Antonio, TX
Print_ISBN
0-7803-8987-5
Electronic_ISBN
0-7803-8988-3
Type
conf
DOI
10.1109/IEMDC.2005.195835
Filename
1531453
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