InAsN/InGaAs/InP quantum well structures for midinfrared diode lasers

Author

Lin, H.H. ; Shih, D.K. ; Lin, Y.H. ; Chiang, K.H.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

806

Abstract

InAsN/InGaAs multiple quantum wells (MQWs) structures for midinfrared diode lasers is grown on (100) InP substrates by using a VG V-80H gas-source molecular epitaxy (GSMBE). After the GSMBE growth, the laser sample is annealed at 575°C for 20 min under N ambient in order to improve the crystal quality. The PL spectrums of the laser structure before and after annealing are studied. Then the structure is processed into 50-nm-wide broad-area lasers. Laser oscillation under pulsed injection current was obtained from 10K to 260K.

Keywords

III-V semiconductors; arsenic compounds; chemical beam epitaxial growth; gallium arsenide; indium compounds; infrared spectra; photoluminescence; quantum well lasers; 10 to 260 K; 20 min; 50 nm; 575 C; InAsN-InGaAs quantum well structures; InAsN-InGaAs-InP; InP substrates; PL spectrums; VG V-80H gas-source molecular epitaxy growth; crystal quality improvement; laser structure annealing; midinfrared diode lasers; pulsed injection current; Annealing; Diode lasers; Epitaxial growth; Gas lasers; Indium gallium arsenide; Indium phosphide; Optical pulses; Quantum well devices; Quantum well lasers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1253045

Filename

1253045