DocumentCode
2401858
Title
Low dark current 4H-SiC avalanche photodiodes
Author
Guo, Xiangyi ; Beck, Ariane ; Yang, Bo ; Campbell, Joe C.
Author_Institution
Texas Univ., Austin, TX, USA
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
851
Abstract
In this paper, we study the mechanisms of the 4H-SiC avalanche photodiode (APD) dark current and find that the mesa sidewall leakage current is the primary contributor. Improving the sidewall passivation decreases the device dark current.
Keywords
avalanche photodiodes; hydrogen; leakage currents; passivation; photodetectors; silicon compounds; wide band gap semiconductors; 4H-SiC avalanche photodiode; SiC-H; device dark current; mesa sidewall leakage current; sidewall passivation; Annealing; Avalanche photodiodes; Cleaning; Current-voltage characteristics; Dark current; Electric breakdown; Etching; Oxidation; Passivation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253068
Filename
1253068
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