DocumentCode
2402516
Title
High-efficiency InP based four-junction solar cells
Author
Gu, Yuantao ; YAN, JIU DUN ; Raj, Milan ; Choa, F.S.
Author_Institution
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
927
Abstract
In this paper, we simulated and calculated expected efficiency of proposed four-junction solar cells. The InGaAs, AlAsSb, AlInAs and AlGalnAs four-junction solar cells system has a potential to achieve high efficiencies, and can be manufacturable. We fabricated and tested an AlInGaAs(1.0 eV) solar cell.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoconductivity; semiconductor device testing; solar cells; 1.0 eV; AlAsSb; AlGaInAs; AlInAs; InGaAs; InP; InP based four-junction solar cells fabrication; solar cell testing; Doping; Gallium arsenide; Indium phosphide; Lattices; MOCVD; Photoconductivity; Photovoltaic cells; Power generation; Solar power generation; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253107
Filename
1253107
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