• DocumentCode
    2402620
  • Title

    Design and simulation of high level low power 7T SRAM cell using various process & circuit techniques

  • Author

    Mishra, Shipra ; Dubey, Amit ; Tomar, Shelendra Singh ; Akashe, Shyam

  • Author_Institution
    VLSI Design, ITM Univ., Gwalior, India
  • fYear
    2012
  • fDate
    15-17 March 2012
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Low power memory is required today most priority with also high stability. The power is most important factor for today technology so the power reduction for one cell is vital role in memory design techniques. In this paper we introduced some design circuit techniques for low power design. Leakage current in standby mode is the major part of power loss. We concentrate on the technique that to reduced the leakage current in standby mode.
  • Keywords
    SRAM chips; leakage currents; low-power electronics; design circuit techniques; high level low power 7T SRAM cell; high stability; leakage current; low power memory; power loss; standby mode; CMOS integrated circuits; Leakage current; Logic gates; MOSFETs; Random access memory; Threshold voltage; CMOS; Circuit techniques; Process Technique; SRAM; Threshold Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signal Processing, Computing and Control (ISPCC), 2012 IEEE International Conference on
  • Conference_Location
    Waknaghat Solan
  • Print_ISBN
    978-1-4673-1317-9
  • Type

    conf

  • DOI
    10.1109/ISPCC.2012.6224371
  • Filename
    6224371