Performance of the new generation emitter turn-off (ETO) thyristor

Author

Zhang, Bin ; Huang, Alex Q. ; Liu, Yunfeng ; Atcitty, Stanley

Author_Institution

Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

1

fYear

2002

fDate

13-18 Oct. 2002

Firstpage

559

Abstract

The emitter turn-off thyristor (ETO) is a GTO-MOSFET hybrid high power device that can achieve unity turnoff gain condition. A new generation of ETO rated at 4500 V and 4000 A has recently been developed. The improvements are made in the area of manufacturability, functionality and performance. 4000 A snubberless turn-off capability and low conduction loss are achieved in the new ETO using novel circuits and housing design. This paper presents the design, characteristics, and the performance of the new ETO.

Keywords

power MOSFET; power semiconductor switches; thyristors; 4000 A; 4500 V; GTO-MOSFET hybrid high power device; characteristics; conduction loss; design; emitter turn-off thyristor performance; functionality; manufacturability; snubberless turn-off capability; unity turn-off gain condition; Anodes; Cathodes; Circuits; Frequency; MOSFETs; Manufacturing; Power engineering and energy; Switches; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the

Conference_Location

Pittsburgh, PA, USA

ISSN

0197-2618

Print_ISBN

0-7803-7420-7

Type

conf

DOI

10.1109/IAS.2002.1044140

Filename

1044140