Key power semiconductor device concepts for the next decade

Author

Lorenz, L. ; Mitlehner, H.

Author_Institution

Infineon Technol., Munich, Germany

Volume

1

fYear

2002

fDate

13-18 Oct. 2002

Firstpage

564

Abstract

The paper presents a comparison of the latest device concepts like the super junction MOSFET, the IGBT and the actual trends in SiC devices. All these devices are capable of blocking voltages in the range of 1000 V, and optimized for different fields of applications. Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. MOSFETs and JFETs capable of blocking 1800 V with a specific on-resistance of 47 m/spl Omega/ cm/sup 2/ are SiC devices attractive for the system designer.

Keywords

insulated gate bipolar transistors; junction gate field effect transistors; power MOSFET; power semiconductor switches; semiconductor materials; silicon compounds; IGBT; SiC; SiC power switching devices; SiC-Schottky diodes; high breakdown voltages; low specific on-resistance; power semiconductor device; super junction MOSFET; voltages blocking; Design optimization; Insulated gate bipolar transistors; MOSFET circuits; Microelectronics; Paper technology; Power MOSFET; Power semiconductor devices; Power semiconductor switches; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the

Conference_Location

Pittsburgh, PA, USA

ISSN

0197-2618

Print_ISBN

0-7803-7420-7

Type

conf

DOI

10.1109/IAS.2002.1044141

Filename

1044141