• DocumentCode
    2404220
  • Title

    Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators

  • Author

    Pantouvaki, M. ; Yu, H. ; Verheyen, P. ; Lepage, G. ; Bogaerts, W. ; Moelants, M. ; Wouters, J. ; Radisic, D. ; Vandervorst, A. ; Absil, P. ; Van Campenhout, J.

  • Author_Institution
    imec, Leuven, Belgium
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    44
  • Lastpage
    45
  • Abstract
    Silicon ring modulators with interdigitated diodes demonstrate 7.5 dB extinction ratios at 3 dB insertion loss for 1 Vpp, a 4.5 dB improvement over the lateral diode design, and can operate up to 10 Gb/s.
  • Keywords
    elemental semiconductors; optical design techniques; optical losses; optical modulation; silicon; Si; bit rate 10 Gbit/s; interdigitated diode design; lateral diode design; loss 3 dB; low-voltage low-loss ring modulators; voltage 1 V; Extinction ratio; Insertion loss; Optical losses; Optical modulation; Optical waveguides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Interconnects Conference, 2012 IEEE
  • Conference_Location
    Santa Fe, NM
  • Print_ISBN
    978-1-4577-1620-1
  • Type

    conf

  • DOI
    10.1109/OIC.2012.6224455
  • Filename
    6224455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2404220