DocumentCode
2404644
Title
Optoelectronic integration in silicon-on-insulator technologies
Author
Boussey, Jumana ; Chouteau, Stéphanie
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Volume
2
fYear
1998
fDate
6-10 Oct 1998
Firstpage
407
Abstract
Established silicon microelectronics fabrication techniques can be largely exploited to fabricate low-loss, low-cost and high volume optical integrated devices. Because of the availability of a buried insulator layer underneath a thin monocrystalline silicon film, Silicon-On-Insulator substrates are currently shown to be a natural candidate for the integration of guided-wave optics components working at the fiber-optical communications wavelengths of 1.33 and 1.55 μm. In this paper, the authors review the basic principles of optical waveguides on SOI materials and describe some recent realizations based on optoelectronic system integration in SOI technologies (waveguides, switches, phase modulator or shifter, etc.)
Keywords
integrated optoelectronics; optical planar waveguides; silicon-on-insulator; 1.33 micron; 1.55 micron; SOI substrate; Si; buried insulator layer; fiber optical communication; guided wave optics component; microelectronics fabrication; monocrystalline silicon thin film; optical integrated device; optical waveguide; optoelectronic integration; silicon-on-insulator technology; Insulation; Integrated optics; Microelectronics; Optical device fabrication; Optical devices; Optical films; Optical modulation; Optical waveguides; Semiconductor films; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.733771
Filename
733771
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