Temperature behavior of AlGaN/GaN on SiC HEMTs

Author

Darwish, Ali M. ; Huebschman, Benjamin ; Del Rosario, Romeo ; Viveiros, Edward ; Hung, H. Alfred

Author_Institution

Army Res. Lab., Adelphi, MD, USA

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

This study presents extensive characterization and comparison of current GaN/SiC devices (from 5 US manufacturers) across temperature (-25-125°C). The changes with temperature for: saturated current (I_dss), transconductance (g_m), and maximum stable gain (MSG) are measured and statistics are studied. The typical temperature-coefficients (TC) are established for I_dss, g_m, and MSG in GaN technology. This information is useful for MMIC designs. The minimum temperature coefficients compare well with theoretical expectations. Finally, a correlation is observed between the temperature behavior of RF and DC parameters.

Keywords

aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; -25 to 125 C; AlGaN-GaN-SiC; DC parameter; HEMT; MMIC designs; RF parameter; maximum stable gain; saturated current; temperature behavior; temperature coefficients; transconductance characteristic; Aluminum gallium nitride; Current measurement; Decision support systems; Gallium nitride; HEMTs; MODFETs; Manufacturing; Silicon carbide; Temperature distribution; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531790

Filename

1531790