Harmonic distortion due to narrow width effects in deep sub-micron SOI-CMOS device for analog-RF applications

Author

Lee, Hyeokjae ; Chun, Kwun-Soo ; Yi, Jeong Hyong ; Lee, Jong Ho ; Park, Young June ; Min, Hong Shick

Author_Institution

90-nm Device Design, Chartered Semicond. Manuf., Singapore, Singapore

fYear

2002

fDate

7-10 Oct 2002

Firstpage

83

Lastpage

85

Abstract

The authors have investigated the reason for low-noise frequency degradation, frequency dispersion, and harmonic distortion in narrow width SOI MOSFETs with STI. As the channel width decreases, low-frequency noise characteristics, frequency dispersion and harmonic distortion deteriorate due to the larger influence of the interface state which is caused by interface roughness. They have also analyzed the unit circuits performance of VCO, RO, and single MOSFET amplifiers.

Keywords

CMOS analogue integrated circuits; MOSFET; harmonic distortion; integrated circuit noise; interface roughness; interface states; isolation technology; semiconductor device noise; silicon-on-insulator; voltage-controlled oscillators; RO; SOI MOSFETs; STI; VCO; analog-RF applications; channel width; deep sub-micron SOI-CMOS device; frequency dispersion; harmonic distortion; interface roughness; interface state; low-noise frequency degradation; narrow width effects; single MOSFET amplifier; CMOS analog integrated circuits; Harmonic distortion; Integrated circuit noise; Interface phenomena; Isolation technology; MOSFETs; Semiconductor device noise; Silicon on insulator technology; Voltage controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, IEEE International 2002

Print_ISBN

0-7803-7439-8

Type

conf

DOI

10.1109/SOI.2002.1044427

Filename

1044427