High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz

Author

Baeyens, Y. ; Weimann, N. ; Houtsma, V. ; Weiner, J. ; Yang, Y. ; Frackoviak, J. ; Tate, A. ; Chen, Y.K.

Author_Institution

Lucent Technol., Bell Labs., Murray Hill, NJ, USA

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

High-performance and compact push-push oscillators operating up to 215 GHz were realized in a 0.5 μm emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with maximum oscillation frequency f_max of 220 GHz and Vbceo>5V. Two different push-push topologies, each based on a differential Collpitt oscillators topology, were investigated. Taking the push-push output from the virtual ground at the base-resonator resulted in -8 dBm output power at 184 GHz while about -15...-10 dBm was obtained at 215 GHz by reducing the electrical length of the base resonator. A high-power second harmonic signal of more then 0 dBm was obtained at 184 GHz by directly combining the differential output signal at the collector nodes of the Colpitts oscillator. These oscillators are to our knowledge the highest frequency three-terminal device based sources reported in literature.

Keywords

III-V semiconductors; bipolar MIMIC; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; 0.5 micron; 184 GHz; 215 GHz; D-HBT oscillators; InGaAs-InP; base resonator; collector nodes; compact push-push oscillators; differential Collpitt oscillators topology; electrical length; emitter double-heterojunction; high-performance push-push oscillators; high-power second harmonic signal; high-power submicron; highest frequency device; push-push topologies; three-terminal device; virtual ground; CMOS technology; Circuit topology; Frequency; Heterojunction bipolar transistors; High-resolution imaging; Indium gallium arsenide; Indium phosphide; Power generation; Radar imaging; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531814

Filename

1531814